BSF110N06NT3GXUMA1

Infineon Technologies

Product No:

BSF110N06NT3GXUMA1

Manufacturer:

Package:

MG-WDSON-2

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : 12400

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric ST
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 33µA
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	11mOhm @ 30A, 10V
Power Dissipation (Max)	38W (Tc)
Supplier Device Package	MG-WDSON-2
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)