BSM600C12P3G201

Rohm Semiconductor

Product No:

BSM600C12P3G201

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1200V 600A MODULE

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Rohm Semiconductor
Series -
Package Tray
FET Type N-Channel
Vgs (Max) +22V, -4V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Chassis Mount
Package / Case Module
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 182mA
Base Product Number BSM600
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 2460W (Tc)
Supplier Device Package Module
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 600A (Tc)