Home / FET、MOSFET 阵列 / FS13MR12W2M1HB70BPSA1

FS13MR12W2M1HB70BPSA1

Infineon Technologies

Product No:

FS13MR12W2M1HB70BPSA1

Manufacturer:

Infineon Technologies

Package:

-

Batch:

-

Datasheet:

Description:

LOW POWER EASY

Quantity:

In Stock : 15

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    316.7965

  • 15

    296.714136

  • 30

    285.55955

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolSiC™
Package Tray
Technology Silicon Carbide (SiC)
FET Feature -
Configuration 6 N-Channel (3-Phase Bridge)
Mounting Type -
Package / Case -
Product Status Active
Vgs(th) (Max) @ Id 5.15V @ 28mA
Operating Temperature -
Rds On (Max) @ Id, Vgs 11.7mOhm @ 62.5A, 18V
Supplier Device Package -
Gate Charge (Qg) (Max) @ Vgs 200nC @ 18V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 6050pF @ 800V
Current - Continuous Drain (Id) @ 25°C 62.5A (Tc)