GT10N10

Goford Semiconductor

Product No:

GT10N10

Manufacturer:

Package:

TO-252

Batch:

Datasheet:

Description:

N100V, 7A,RD<140M@10V,VTH1.5V~2.

Quantity:

In Stock : 4483

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Goford Semiconductor
Series	GT
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	140mOhm @ 3.5A, 10V
Power Dissipation (Max)	17W (Tc)
Supplier Device Package	TO-252
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	206 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)