IMBF170R650M1XTMA1
Infineon Technologies
Product No:
IMBF170R650M1XTMA1
Manufacturer:
Package:
PG-TO263-7-13
Batch:
-
Datasheet:
-
Description:
SICFET N-CH 1700V 7.4A TO263-7
Quantity:
In Stock : 921
Minimum: 1 Multiples: 1
Qty
Unit Price
1
6.5075
10
5.57745
100
4.64816
500
4.101283
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Product Information
Parameter Info
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 1.7mA |
| Base Product Number | IMBF170 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.5A, 15V |
| Power Dissipation (Max) | 88W (Tc) |
| Supplier Device Package | PG-TO263-7-13 |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 12 V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
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