IMBG65R107M1HXTMA1

Infineon Technologies

Product No:

IMBG65R107M1HXTMA1

Manufacturer:

Package:

PG-TO263-7-12

Batch:

Datasheet:

Description:

SILICON CARBIDE MOSFET PG-TO263-

Quantity:

In Stock : 1000

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	CoolSIC™ M1
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+23V, -5V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 2.6mA
Base Product Number	IMBG65R
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	141mOhm @ 8.9A, 18V
Power Dissipation (Max)	110W (Tc)
Supplier Device Package	PG-TO263-7-12
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 18 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	496 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)