IPB026N10NF2SATMA1

Infineon Technologies

Product No:

IPB026N10NF2SATMA1

Manufacturer:

Package:

PG-TO263-3

Batch:

Datasheet:

Description:

TRENCH >=100V

Quantity:

In Stock : 901

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	StrongIRFET™ 2
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 169µA
Base Product Number	IPB026N
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.65mOhm @ 100A, 10V
Power Dissipation (Max)	250W (Tc)
Supplier Device Package	PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs	154 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	7300 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	162A (Tc)