IPB051NE8NG

Infineon Technologies

Product No:

IPB051NE8NG

Manufacturer:

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : 775

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	OptiMOS™2
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	5.1mOhm @ 100A, 10V
Power Dissipation (Max)	300W (Tc)
Supplier Device Package	PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Drain to Source Voltage (Vdss)	85 V
Input Capacitance (Ciss) (Max) @ Vds	12100 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)