IPB35N12S3L26ATMA1
Infineon Technologies
Product No:
IPB35N12S3L26ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Batch:
-
Datasheet:
Description:
MOSFET N-CHANNEL_100+
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.4V @ 39µA |
| Base Product Number | IP35N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 26.3mOhm @ 35A, 10V |
| Power Dissipation (Max) | 71W (Tc) |
| Supplier Device Package | PG-TO263-3-2 |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
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