Home / 单 FET,MOSFET / IPB60R125C6ATMA1

IPB60R125C6ATMA1

Infineon Technologies

Product No:

IPB60R125C6ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 30A D2PAK

Quantity:

In Stock : 1865

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    5.833

  • 10

    5.2402

  • 100

    4.29324

  • 500

    3.654764

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolMOS™ C6
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 960µA
Base Product Number IPB60R125
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 125mOhm @ 14.5A, 10V
Power Dissipation (Max) 219W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 2127 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)