Home / 单 FET,MOSFET / IPB80N06S407ATMA2

IPB80N06S407ATMA2

Infineon Technologies

Product No:

IPB80N06S407ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 80A TO263-3

Quantity:

In Stock : 986

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.5485

  • 10

    1.38985

  • 100

    1.117105

  • 500

    0.917814

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 40µA
Base Product Number IPB80N
Operating Temperature -55°C ~ 175°C (TJ)
Power Dissipation (Max) 79W (Tc)
Supplier Device Package PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)