IPD30N06S215ATMA2

Infineon Technologies

Product No:

IPD30N06S215ATMA2

Manufacturer:

Package:

PG-TO252-3-11

Batch:

Datasheet:

Description:

MOSFET N-CH 55V 30A TO252-31

Quantity:

In Stock : 2696

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 80µA
Base Product Number	IPD30N06
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	14.7mOhm @ 30A, 10V
Power Dissipation (Max)	136W (Tc)
Supplier Device Package	PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Drain to Source Voltage (Vdss)	55 V
Input Capacitance (Ciss) (Max) @ Vds	1485 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)