IPD50N06S4L08ATMA2

Infineon Technologies

Product No:

IPD50N06S4L08ATMA2

Manufacturer:

Package:

PG-TO252-3-11

Batch:

Datasheet:

Description:

MOSFET N-CH 60V 50A TO252-31

Quantity:

In Stock : 7373

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±16V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 35µA
Base Product Number	IPD50
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	7.8mOhm @ 50A, 10V
Power Dissipation (Max)	71W (Tc)
Supplier Device Package	PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	4780 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)