IPD60N10S412ATMA1

Infineon Technologies

Product No:

IPD60N10S412ATMA1

Manufacturer:

Package:

PG-TO252-3-313

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 60A TO252-3

Quantity:

In Stock : 5883

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 46µA
Base Product Number	IPD60N10
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	12.2mOhm @ 60A, 10V
Power Dissipation (Max)	94W (Tc)
Supplier Device Package	PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2470 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)