IPD90R1K2C3ATMA2

Infineon Technologies

Product No:

IPD90R1K2C3ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 900V 2.1A TO252-3

Quantity:

In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.71

  • 10

    1.4231

  • 100

    1.132875

  • 500

    0.958607

  • 1000

    0.813371

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Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 310µA
Base Product Number IPD90
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max) 83W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 3.2 nC @ 10 V
Drain to Source Voltage (Vdss) 900 V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)