IPP60R080P7XKSA1

Infineon Technologies

Product No:

IPP60R080P7XKSA1

Manufacturer:

Package:

PG-TO220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 37A TO220-3

Quantity:

In Stock : 223

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Infineon Technologies
Series	CoolMOS™ P7
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 590µA
Base Product Number	IPP60R080
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	80mOhm @ 11.8A, 10V
Power Dissipation (Max)	129W (Tc)
Supplier Device Package	PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	2180 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	37A (Tc)