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IQE013N04LM6CGATMA1

Infineon Technologies

Product No:

IQE013N04LM6CGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TTFN-9-1

Batch:

-

Datasheet:

-

Description:

40V N-CH FET SOURCE-DOWN CG 3X3

Quantity:

In Stock : 2459

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.5745

  • 10

    2.13655

  • 100

    1.700785

  • 500

    1.439098

  • 1000

    1.221064

  • 2000

    1.160007

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Product Information

Parameter Info
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 51µA
Base Product Number IQE013
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.35mOhm @ 20A, 10V
Power Dissipation (Max) 2.5W (Ta), 107W (Tc)
Supplier Device Package PG-TTFN-9-1
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 205A (Tc)