IXTA1R6N100D2HV

IXYS

Product No:

IXTA1R6N100D2HV

Manufacturer:

IXYS

Package:

TO-263HV

Batch:

-

Datasheet:

Description:

MOSFET N-CH 1000V 1.6A TO263HV

Quantity:

In Stock : 189

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    4.351

  • 10

    3.6556

  • 100

    2.95735

  • 500

    2.628726

  • 1000

    2.250844

  • 2000

    2.119412

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Product Information

Parameter Info
Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature Depletion Mode
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 100µA
Base Product Number IXTA1
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package TO-263HV
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Drain to Source Voltage (Vdss) 1000 V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 0V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tj)