NTH4L020N120SC1

onsemi

Product No:

NTH4L020N120SC1

Manufacturer:

Package:

TO-247-4L

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 102A TO247

Quantity:

In Stock : 436

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	onsemi
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+25V, -15V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-4
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 20mA
Base Product Number	NTH4L020
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 20V
Power Dissipation (Max)	510W (Tc)
Supplier Device Package	TO-247-4L
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	2943 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	102A (Tc)