RCD100N19TL

Rohm Semiconductor

Product No:

RCD100N19TL

Manufacturer:

Package:

CPT3

Batch:

Datasheet:

Description:

MOSFET N-CH 190V 10A CPT3

Quantity:

In Stock : 1108

Minimum: 1 Multiples: 1

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Parameter Info

Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Base Product Number	RCD100
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	182mOhm @ 5A, 10V
Power Dissipation (Max)	850mW (Ta), 20W (Tc)
Supplier Device Package	CPT3
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Drain to Source Voltage (Vdss)	190 V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)