SI4459BDY-T1-GE3
Vishay Siliconix
Product No:
SI4459BDY-T1-GE3
Manufacturer:
Package:
8-SO
Batch:
-
Datasheet:
Description:
MOSFET P-CH 30V 20.5A/27.8A 8SO
Quantity:
In Stock : 11268
Minimum: 1 Multiples: 1
Qty
Unit Price
1
1.0735
10
0.88065
100
0.685045
500
0.580697
1000
0.473034
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Base Product Number | SI4459 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 15A, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 5.6W (Tc) |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3490 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.5A (Ta), 27.8A (Tc) |
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