SIDR626LDP-T1-RE3
Vishay Siliconix
Product No:
SIDR626LDP-T1-RE3
Manufacturer:
Package:
PowerPAK® SO-8DC
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 60V 45.6A/2.4A PPAK
Quantity:
In Stock : 11811
Minimum: 1 Multiples: 1
Qty
Unit Price
1
2.774
10
2.30755
100
1.836825
500
1.5542
1000
1.318714
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Product Information
Parameter Info
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SIDR626 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Supplier Device Package | PowerPAK® SO-8DC |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 45.6A (Ta), 2.4A (Tc) |
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30,000,000Standard Product Unit
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15,000 ㎡In-stock Warehouse
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