TK10Q60W,S1VQ

Toshiba Semiconductor and Storage

Product No:

TK10Q60W,S1VQ

Package:

I-Pak

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 9.7A IPAK

Quantity:

In Stock : 75

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.774

  • 10

    2.49185

  • 100

    2.002885

  • 500

    1.645552

  • 1000

    1.36345

  • 2000

    1.269418

  • 5000

    1.222403

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 500µA
Base Product Number TK10Q60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
Power Dissipation (Max) 80W (Tc)
Supplier Device Package I-Pak
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)