TRS8E65H,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS8E65H,S1Q

Package:

TO-220-2L

Batch:

-

Datasheet:

-

Description:

G3 SIC-SBD 650V 8A TO-220-2L

Quantity:

In Stock : 395

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.622

  • 10

    2.17455

  • 100

    1.73071

  • 500

    1.464444

  • 1000

    1.242552

  • 2000

    1.180422

  • 5000

    1.136048

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Capacitance @ Vr, F 520pF @ 1V, 1MHz
Supplier Device Package TO-220-2L
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Operating Temperature - Junction 175°C
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 8 A